CRYSTAL GROWTH APPARATUS FOR COMPOUND SEMICONDUCTOR

PURPOSE:To grow the titled high-quality crystal with stable temperature distribution in a furnace in a short time, by heating a raw material in a specific quartz ampul in electric furnaces for high and low temperatures, having heat insulators respectively placed between furnace ends, between the fur...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YOSHIDA KIYOTERU, KIKUTA TOSHIO, KASHIYANAGI YUZO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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