CRYSTAL GROWTH APPARATUS FOR COMPOUND SEMICONDUCTOR

PURPOSE:To grow the titled high-quality crystal with stable temperature distribution in a furnace in a short time, by heating a raw material in a specific quartz ampul in electric furnaces for high and low temperatures, having heat insulators respectively placed between furnace ends, between the furnaces and between the furnaces and a linear tube and provided in a high-pressure vessel. CONSTITUTION:An ampul 15 containing a boat 18 containing, e.g. red phosphorus 16 and In 17, is placed in a quartz liner tube 14 and both ends thereof are sealed with tube end heat insulators 19 and 20. The sealed ampul 15 is then inserted into an electric furnace so as to position the In 17 on the electric furnace 13 for high temperatures and the red phosphorus 16 on the electric furnace 12 for low temperatures. A heat insulator 21 between the furnaces having a smaller outside diameter than those of the electric furnaces 12 and 13 is provided therebetween and a heat insulator 22 at the furnace end on the low temperature side is provided at the outer end of the electric furnace 12 for low temperatures. A heat insulator 23 at the furnace end on the high temperature side is installed in the outer end of the electric furnace 13 for high temperatures and an intermediate heat insulator 24 is provided between the heat insulator 21 between the furnaces and the liner tube 14 to suppress convection in the furnace. The whole is then placed in a high-pressure vessel 11 and an inert as (e.g. Ar) having a lower heat transfer coefficient than that of N2 is filled under pressure to grow a compound semiconductor crystal (e.g. InP) by heating.