PATTERN FORMATION

PURPOSE:To enable a layer deposited on the side walls of a resist stencil to be removed completely, by providing between the deposited layer and the resist stencil a layer which can be removed with an acid not damaging the resist. CONSTITUTION:Two resist layers 2 and 1 are deposited on films 3, 4 and 5 of Nb, Al, Nb or the like formed on a substrate 14. The resist l is patterned and the layer 3 is dry-etched. Then, a film of Pb, In or the like which can be etched by a weak acidic solution not damaging the resist layers 1 and 2 is vapor deposited thereon. After the layer 4 is removed by dry etching, the substrate is etched with the weak acidic solution. A film 7 deposited during the dry etching process can be removed completely together with the film 6 which is present between the film 7 and the side walls of the resist layers 1 and 2. Thus, the resist pattern can be formed without burrs or the like. A similar result can be obtained also by forming a substrate support base of the same material as that of the film 6 in the dry etching process.