MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To form a diffused layer evenly on overall junction surface in contact with a copper ball part making the junction excellent and effective eliminating any white turbidity on the surface of electrode by a method wherein evaporation process is performed meeting the requirement for low speed vacuum evaporation from the starting time to the time immediately before finishing evaporation while meeting the requirement for high speed vacuum evaporation from the immediately before finishing time to the finishing time. CONSTITUTION:Evaporation process is performed meeting requirement for low speed evaporation from the starting time to the time immediately before finishing evaporation at the low speed V1 (e.g.300A/min-800A/min) for the time t1 (e.g. 10-60 min) and after the time t1 elapsed, the evaporation process is continued meeting the requirement for high speed evaporation from the time immediately before finishing eavoration to the finishing time at high speed V2 (e.g. 1500A/min-3000A/min) for the time t2 (e.g. 20sec-1 min). Through these procedures, an electrode main body in high oxygen concentration and around specified hardness is formed on the chip side while an aluminium or aluminium alloy electrode 12 in low oxygen concentration and without any white turbidity on the surface is formed on the electrode surface side. On the other hand, the film thickness is specified to be around 1/10-1/5 of the thickness of overall electrode.