MATERIAL RESISTANT TO METAL AND SALT MELT, MANUFACTURE AND USE

A material resistant to high temperature melts of metal and salt which comprises a composite material containing silicon nitride, silicon oxynitride, silicon dioxide and silicon prepared by (a) suspending silicon powder in SiO2 sol to form a pourable mass, (b) molding a workpiece from said mass, (c)...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	PEETAA BODEITSUCHIYU, INGO SHIYUBIRUTORITSUHI, BERUNAA KANHEN, HORUSUTO RANGE
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH FOUNDRY MOULDING LIME, MAGNESIA METALLURGY PERFORMING OPERATIONS POWDER METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG TRANSPORTING TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A material resistant to high temperature melts of metal and salt which comprises a composite material containing silicon nitride, silicon oxynitride, silicon dioxide and silicon prepared by (a) suspending silicon powder in SiO2 sol to form a pourable mass, (b) molding a workpiece from said mass, (c) hardening the molded workpiece, and (d) nitriding the hardened workpiece in a nitrogen atmosphere to form silicon nitride and silicon oxynitride to a degree that SiO2 and elemental silicon remain detectable in the nitrided workpiece, is useful as the material of construction for crucibles and tools for confining, handling and treating melts of metals or salts.