MEMORY ELEMENT

PURPOSE:To avoid malfunction even if a noise is generated at a power terminal by providing a write terminal through which a power to be converted into a high voltage at a voltage boosting circuit is supplied in addition to the supply terminal of the operating power for a memory element. CONSTITUTION:A voltage boosting circuit 21 generating a high voltage AV required for data write/erasure in a memory is provided with a separate write terminal WT from a power terminal Vcc. A high voltage AV is outputted independently and separately of the operating power Vcc of the circuit 21 and in applying a boosting write voltage 5V to the terminal WT, the high voltage AV (15V) is outputted from the circuit 21. In applying a voltage for the data write and erasure only, the mis-write/mis-erasure is prevented by supplying the voltage to generate the high voltage AV required for the write/erasure of data in the memory to the terminal WT in this way.