FORMATION OF SEMICONDUCTOR THIN FILM

PURPOSE:To simultaneously form uniform semiconductor thin films on a plurality of sheets of semiconductor substrate by selecting such a condition as changing Raynolds number at the entrance of susceptor according to the angle of susceptor surface. CONSTITUTION:A plurality of semiconductor substrates 5 are attached to the side surface of susceptor 4 provided within a reactor tube 1, a mixed gas is introduced from an upper gas inlet port 2 and is caused to flow to the lower portion and it is exhausted from a lower exhaust port 3. The substrate 5 is heated by an RF coil 6 and a thin film is caused to grow on the substrate 5 through reaction of raw material gas. In this barrel type apparatus, the susceptor angle theta (angle of susceptor surface 4 to the longitudinal direction) is within the range of 4-7 deg. and a thin film is formed under the condition that the relation between the Raynolds number Re.s at the entrance of susceptor 4 and the critical Rayholds number Re-cr which is uniquely determined by the angle theta and expressed as A exp (-B.theta) (A and B are constants) can be indicated by the equation I. According to this method, uniform semiconductor thin film can be formed by the vapor growth method on a plurality of sheets of substrate 5.