STATIC RAM

PURPOSE:To highly accurately prevent an abnormal high voltage of a data line caused by the fluctuation of the supply voltage or tailing current, by providing a data line level controlling means which controls the level of the data line below a prescribed value. CONSTITUTION:A data line level controlling means 8 is constituted in such a way that plural MOSFETs 13, whose drains and gates are coupled with each other as nonlinear elements in which currents increase by voltages of prescribed levels or higher, are connected in series between data lines (D1, D1') - (Dn, Dn') corresponding to static memory cells 1a-1d and an earth terminal. The sum of the threshold voltages of the FETs Q13 connected to one data line is set to a limiting voltage Vcn which is almost equal to the standard voltage Vhs of the data lines. When the electric potential of the data lines exceeds the limiting voltage Vcn due to fluctuation of the supply voltage or a tailing current, all the MOSFETs Q12 are turned on and a bias voltage which is almost equal to the standard voltage Vhs is always applied across the data lines.