SEMICONDUCTOR THIN FILM VAPOR GROWTH APPARATUS

PURPOSE:To suppress the turbulence of gas in the upper portion of a susceptor without sacrificing the yield of a raw material, the quality of carrier gas and the characteristics of a thin semiconductor film by limiting an interval between a cap provided on the top of the susceptor rotatably arranged in a reaction tube and an approaching portion at the outer wall of the cap and the inner wall of the reaction tube. CONSTITUTION:An interval (s) between a semispherical cap 4 and an approaching portion is set 0.5-1.5 times of that between the inner wall of a reaction tube 1 and the outer periphery of a susceptor 5 of a polygonal trapezoidal conical shape having the cap in the upper portion rotatably provided in the tube 1 in the susceptor 5 to form the carrier gas and raw gas passing sectional area equal to or smaller than the value in the susceptor 5 in each portion of the upper portion of the susceptor 5. Thus, it can prevent the carrier gas and the raw gas fed from the gas inlet of the tube 1 from flowing in turbulence.