JPS6251920B

Si-crystals with columnar structures are produced by casting a silicon melt through a gap provided in a crucible onto a melt-resistant carrier body having periodically spaced crystallization-seed centers on a surface thereof facing the melt, and allowing the so-cast molten silicon to cool so that cr...

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1. Verfasser:	YOOZEFU GURAAPUMAIYAA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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creator	YOOZEFU GURAAPUMAIYAA
description	Si-crystals with columnar structures are produced by casting a silicon melt through a gap provided in a crucible onto a melt-resistant carrier body having periodically spaced crystallization-seed centers on a surface thereof facing the melt, and allowing the so-cast molten silicon to cool so that crystallization of the melt onto the seed centers occurs. In a preferred embodiment, an elongated traveling band-shaped substrate having a select hole pattern therein functioning as the seed centers, is utilized as the carrier body.
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In a preferred embodiment, an elongated traveling band-shaped substrate having a select hole pattern therein functioning as the seed centers, is utilized as the carrier body.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1987</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOD2Cgg2MzI1tDQycOJhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFIOpyMjIlSBACBwhxg</recordid><startdate>19871102</startdate><enddate>19871102</enddate><creator>YOOZEFU GURAAPUMAIYAA</creator><scope>EVB</scope></search><sort><creationdate>19871102</creationdate><title>JPS6251920B</title><author>YOOZEFU GURAAPUMAIYAA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS6251920BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1987</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YOOZEFU GURAAPUMAIYAA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOOZEFU GURAAPUMAIYAA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JPS6251920B</title><date>1987-11-02</date><risdate>1987</risdate><abstract>Si-crystals with columnar structures are produced by casting a silicon melt through a gap provided in a crucible onto a melt-resistant carrier body having periodically spaced crystallization-seed centers on a surface thereof facing the melt, and allowing the so-cast molten silicon to cool so that crystallization of the melt onto the seed centers occurs. 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subjects	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title	JPS6251920B
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