JPS6251920B

JPS6251920B

Si-crystals with columnar structures are produced by casting a silicon melt through a gap provided in a crucible onto a melt-resistant carrier body having periodically spaced crystallization-seed centers on a surface thereof facing the melt, and allowing the so-cast molten silicon to cool so that cr...

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Bibliographische Detailangaben
1. Verfasser: YOOZEFU GURAAPUMAIYAA
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:Si-crystals with columnar structures are produced by casting a silicon melt through a gap provided in a crucible onto a melt-resistant carrier body having periodically spaced crystallization-seed centers on a surface thereof facing the melt, and allowing the so-cast molten silicon to cool so that crystallization of the melt onto the seed centers occurs. In a preferred embodiment, an elongated traveling band-shaped substrate having a select hole pattern therein functioning as the seed centers, is utilized as the carrier body.