SEMICONDUCTOR DEVICE

PURPOSE:To extend a gate control range by partly forming the second conductivity type semiconductor region of high impurity region corresponding to the first conductivity type region on the other surface of a substrate, and spacing an interval between the bottom of the second conductivity type regio...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	MAJIYUUMUDAARU GOORABU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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