ELECTRON BEAM EXPOSING METHOD

PURPOSE:To form a fine pattern with high dimensional accuracy, by forming a resist pattern whose cross-sectional form is nearly vertical, by a method wherein the distribution of the electron absorption energy in a resist film is made uniform by the effect of a dual exposure applying both a high acceleration voltage and a low acceleration voltage. CONSTITUTION:After a resist film 6 sensitive to electron beams is coated on a semiconductor substrate 3, a predefined pattern is drawn on a resist film 6 by electron beams with acceleration voltage to penetrate the resist film 6. Then, the pattern is drawn on the resist film 6 by the electron beams 8 with acceleration voltage insufficient to penetrate the resist film 6. Thus the distribution of electron absorption energy in the resist film 6 is made uinform. Thereby, resist pattern 9 whose cross-sectional form is nearly vertical is formed, and a fine pattern with high dimensional accuracy is obtained.