JPS6234719B

PURPOSE:To form a single crystal of LiTaO3 into a single domain in a less cracked state in the stage of applying a prescribed electric field at prescribed temp. to said single crystal by starting the application at temp. lower than the specific values. CONSTITUTION:Electrodes 4 are provided at both...

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Bibliographische Detailangaben
Hauptverfasser:	ENOKIDA KENJI, OKADA YOSHINORI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY CONDUCTORS CRYSTAL GROWTH DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRICITY FREQUENCY-CHANGING INSULATORS METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To form a single crystal of LiTaO3 into a single domain in a less cracked state in the stage of applying a prescribed electric field at prescribed temp. to said single crystal by starting the application at temp. lower than the specific values. CONSTITUTION:Electrodes 4 are provided at both ends of the Z-axis of a single crystal 3 of LiTaO3, and are inserted into an electric furnace 2. Voltage, for example, 60V is applied from lead wires 5 by turning a switch on. Electricity is conducted to the heater 1 in the furnace 2 to heat up the furnace gradually. If the single crystal is maintained for about 20min at 650 deg.C when the crystal attains said temp., the single crystal is formed approximately in a single domain. Thereafter, the furnace temp. is reduced gradually and when the temp. of the single crystals falls to 150 deg.C, the application of the electric field is ceased and when the temp. falls to 60 deg.C, the single crystal is removed, whereby the single domain treatment is completed. The rate of generation of cracks is extremely low. If the application of the electric field is started when the temp. is