POWER UNIT FOR ION SOURCE

PURPOSE:To control a surge voltage effectively and improve dielectric strength and reliability of a semiconductor switch by inserting in an output side of the semiconductor switch a diode fixing a negative voltage at an earth potential. CONSTITUTION:Ten GTO thyristors 1 each being a self-extinction...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SATO TADASHI, KUROSAWA TOMOE, OHATA KOKICHI, HASHIMOTO ISAO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To control a surge voltage effectively and improve dielectric strength and reliability of a semiconductor switch by inserting in an output side of the semiconductor switch a diode fixing a negative voltage at an earth potential. CONSTITUTION:Ten GTO thyristors 1 each being a self-extinction of arc-type semiconductor switching element are connected in series, a partial potential resistance and a by-pass diode 2 are connected in parallel with the thyristor 1 to constitute a high-voltage semiconductor switch 3 together with a thyristor- driving gate circuit. A current-limiting reactor 4 is connected to an output side of the high voltage semiconductor switch 3 and also to a high-voltage electrode of ion source. A surge voltage higher than an output voltage of DC power source is fixed at the output voltage of DC power source by a diode 2 arranged in parallel with the semiconductor switch 1. A surge voltage on the side more negative than an earth potential is fixed at the earth potential if a high voltage diode 5 is turned ON.