SEMICONDUCTOR DEVICE

PURPOSE:To obtain inverse recovery characteristics equivalent to the semiconductor device of an individual diode chip, by forming a blocking region for an injected minority carrier. CONSTITUTION:In consideration of the specific resistance rhoOMEGAcm of an N-type substrate, the distance(l)mum between the anode part of a diode and the base part of a transistor is required to be 3rhomum in order to block the transistor action of a parasitic transistor, where rho is a numerical value represented by OMEGAcm about the specific resistance of the substrate. When width(l) of the base part 9 of a parasitic transistor Q1 satisfies the above condition, the minority carrier flowing towards the base part 3b of a transistor being a portion of the minority carrier (positive hole) injected from the anode part 4a of a diode to the base part 9 vanishes practicably as the result of recombination during transmission. Therefore the transistor action of the parastic transistor Q1 can be blocked.