MANUFACTURE OF SEMICONDUCTOR DEVICE

MANUFACTURE OF SEMICONDUCTOR DEVICE

Semiconductor integration employing different devices on the same substrate (1) in areas of higher (3) and lower (2) crystallographic index planes provides device advantages in ability to integrate both p type and n type devices together and to achieve both types with a single epitaxial layer. An in...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUCHIIBUN RORENTSU RAITO, KURISUTEINA MARII NOODORAA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Semiconductor integration employing different devices on the same substrate (1) in areas of higher (3) and lower (2) crystallographic index planes provides device advantages in ability to integrate both p type and n type devices together and to achieve both types with a single epitaxial layer. An integrated complementary device circuit is provided with a GaAs substrate with a p type device having a hole gas (25) as a carrier mechanism and an n type device having an electron gas (27) as a carrier mechanism.