STRUCTURE OF PAD PART OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent the generation of inferiority on a pad part and to obtain a highly reliable multilayer interconnection semiconductor device by a method wherein the pad part is constructed in such a manner that the low temperature insulating film of the pad part region can be removed. CONSTITUTION:A low temperature insulating film 5, which is coated at 400 deg.C or above, and the second insulating film 6 are formed between the first insulating film 3 located on the substrate 1 of the semiconductor device and the second insulating film 8. A pad part 10 is formed using said insulating film 6, and the low temperature insulating film 5 on the part where it is adhered to the lower part of the pad part 10 is removed. This low temperature insulating film 5 is formed into the insulating film which is coated by performing one of a sputtering method, a plasma excitation CVD method and a spin-coating method in which the film is coated at the temperature of 400 deg.C or below. The inferiority on the pad part 10, due to the stress generated when a bonding operation is performed on a lead wire, can be prevented and the reliability of a multilayer interconnection semiconductor device can also be improved.