ELECTORN BEAM EXPOSURE DEVICE

PURPOSE:To reduce any shift of electron beams due to the secondary electron charge up by a method wherein Hion beams are led to a region where secon dary electrons are suspended above a wafer. CONSTITUTION:Hydrogen gas led in from a hydrogen gas leading-in part 1 is fed to an ion source part 2 to produce hydrogen plasma by RE process. The produced plasma is accelerated by DC voltage impressed upon an electrode 4 to be fed to an exposure chamber 6 containing a wafer 5. A static lens 3 impressed with positive voltage is arranged on the inlet of exposure chamber 6 of Hion beams focused by the lens 3 to be fed to the surface of wafer 5. Through these procedures, a layer of secondary electrodes 12 suspended above the surface of wafer 5 is neutralized by being recoupled with Hions eliminating any unfavorable effect on an electron beam 11 so that the electron beam 11 has only a proper deflection due to a deflection coil 10. Resultantly, any distorted pattern can be removed.