MANUFACTURE OF THIN FILM

PURPOSE:To form a thin film which contains impurities at a decreased ratio and excels in characteristics such as exfoliation resistance and strength by specifying the current density of ion implantation and the vapor deposition speed of vapor deposition particles. CONSTITUTION:An ion beam 4 of nitrogen, etc., is irradiated to a substrate 3 to clean the surface of the substrate 3 and thereafter the above-mentioned ion beam 4 is implanted to the substrate 3 surface simultaneously with vapor deposition of Ti, etc., with an electron beam vapor deposition device 3. The current density of the ion beam 4 is specified to >=0.3mA/cm while the acceleration voltage of the ion beam 4 is maintained constant. The vapor deposition speed of the vapor deposition particles on the surface of the thin film is adjusted at the same time to >=3Angstrom /sec by changing the output of an electron gun of the electron beam vapor deposition device 7. The quantity of the implanted ions and vapor deposition particles arriving at the substrate 3 surface is thereby increased than the quantity of the impurities such as carbon and oxygen arriving from a vacuum vessel at the substrate surface, by which the quantity of the impurities in the thin film is surely decreased.