GOLD WIRE FOR SEMICONDUCTOR DEVICE BONDING

PURPOSE:To obtain a gold wire for semiconductor device bonding having high strength at ordinary and high temps. and reduced in loop height, by using pure gold of >=99.99% purity and by adding specific amounts of La and/or Pb and Be and/or Ca to the above. CONSTITUTION:A gold ingot has a compositi...

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Hauptverfasser:	TANEDA HIDEO, KOIKE KAZUAKI
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS METALLURGY SEMICONDUCTOR DEVICES TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a gold wire for semiconductor device bonding having high strength at ordinary and high temps. and reduced in loop height, by using pure gold of >=99.99% purity and by adding specific amounts of La and/or Pb and Be and/or Ca to the above. CONSTITUTION:A gold ingot has a composition in which 0.0001-0.006wt% La and/or Pb and 0.002-0.003wt% Be and/or Ca are incorporated to the pure gold of >=99.99% purity containing inevitable impurities. This gold ingot is subjected to wire drawing working to be formed into gold wire for semiconductor device bonding.