PRODUCTION OF DIAMOND SEMICONDUCTOR
PURPOSE:To obtain the titled semiconductor extremely useful as an electronic element material, having improved thermal conductivity, etc., by reacting a mixed gas of an oxygen-containing compound containing O, C and H and a dopant and precipitating. CONSTITUTION:A reaction tube 9 is packed with diam...
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| creator | KAWACHI SUSUMU NAKAMURA KATSUYUKI |
| description | PURPOSE:To obtain the titled semiconductor extremely useful as an electronic element material, having improved thermal conductivity, etc., by reacting a mixed gas of an oxygen-containing compound containing O, C and H and a dopant and precipitating. CONSTITUTION:A reaction tube 9 is packed with diamond or a material 12 except the diamond, valves 6-8 are closed and the reaction tube is exhausted to |
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CONSTITUTION:A reaction tube 9 is packed with diamond or a material 12 except the diamond, valves 6-8 are closed and the reaction tube is exhausted to <=about 10<-4>Torr by a high vacuum exhaust device 14. The valves 6 and 8 are opened. As a given amount of a H2 gas as a carrier gas is sent from a carrier gas feeder 1, a given amount of an oxygen-containing compound such as butanol, etc., containing O, C and H as a carbon source is fed from an oxygen-containing compound feeder 2 to the reaction tube. Microwave having given output is sent from a microwave oscillator 11 to the reaction tube and plasma is generated in the reaction tube 9 while controlling gas pressure at given pressure. The valve 7 is successively opened, a given amount of a dopant such as B2H6, etc. is fed from a dopant feeder to the reaction tube, temperature of the substrate 12 is measured by a thermocouple 13, a mixed gas is reacted at a given temperature for a fixed time and the titled semiconductor is precipitated from the gaseous phase on the substrate 12 and grown.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1987</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19871001&DB=EPODOC&CC=JP&NR=S62223095A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19871001&DB=EPODOC&CC=JP&NR=S62223095A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWACHI SUSUMU</creatorcontrib><creatorcontrib>NAKAMURA KATSUYUKI</creatorcontrib><title>PRODUCTION OF DIAMOND SEMICONDUCTOR</title><description>PURPOSE:To obtain the titled semiconductor extremely useful as an electronic element material, having improved thermal conductivity, etc., by reacting a mixed gas of an oxygen-containing compound containing O, C and H and a dopant and precipitating. 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CONSTITUTION:A reaction tube 9 is packed with diamond or a material 12 except the diamond, valves 6-8 are closed and the reaction tube is exhausted to <=about 10<-4>Torr by a high vacuum exhaust device 14. The valves 6 and 8 are opened. As a given amount of a H2 gas as a carrier gas is sent from a carrier gas feeder 1, a given amount of an oxygen-containing compound such as butanol, etc., containing O, C and H as a carbon source is fed from an oxygen-containing compound feeder 2 to the reaction tube. Microwave having given output is sent from a microwave oscillator 11 to the reaction tube and plasma is generated in the reaction tube 9 while controlling gas pressure at given pressure. The valve 7 is successively opened, a given amount of a dopant such as B2H6, etc. is fed from a dopant feeder to the reaction tube, temperature of the substrate 12 is measured by a thermocouple 13, a mixed gas is reacted at a given temperature for a fixed time and the titled semiconductor is precipitated from the gaseous phase on the substrate 12 and grown.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PRODUCTION OF DIAMOND SEMICONDUCTOR |
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