PRODUCTION OF DIAMOND SEMICONDUCTOR

PURPOSE:To obtain the titled semiconductor extremely useful as an electronic element material, having improved thermal conductivity, etc., by reacting a mixed gas of an oxygen-containing compound containing O, C and H and a dopant and precipitating. CONSTITUTION:A reaction tube 9 is packed with diam...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KAWACHI SUSUMU, NAKAMURA KATSUYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To obtain the titled semiconductor extremely useful as an electronic element material, having improved thermal conductivity, etc., by reacting a mixed gas of an oxygen-containing compound containing O, C and H and a dopant and precipitating. CONSTITUTION:A reaction tube 9 is packed with diamond or a material 12 except the diamond, valves 6-8 are closed and the reaction tube is exhausted to