MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent cracks in an Al interconnection layer, which are yielded at the angle part of the upper part of a contact hole and the corner part of the bottom part of the contact hole, by growing a W film so that the film is not attached on an insulating film, and upheaving the bottom part of the contact hole. CONSTITUTION:A semiconductor element is formed on a silicon substrate 11. A first insulating film 14 having an opened contact hole 13 is formed on an element forming region 12. A tungsten silicide (WSi) film 15 is formed on the insulating film 14 and in the contact hole 13. The second insulating film, e.g., an SiO2 film 16, is formed on the WSi film 15. Then the second insulating film 16, which is formed in the contact hole 13, is removed. A W film 17 is selectively formed in the contact hole. The second film 16 and the W film 17a thereon are removed together. The WSi film 15 on the first insulating film 14 is selectively etched away. Then, a W film 18 is selectively grown in the contact hole 13. Thus, the inside of the contact hole 13 is buried with the W film, an Al interconnection film can be flatly formed and cracks are not yielded.