RESIST COATING EQUIPMENT

PURPOSE:To form an uniform resist film, by installing wafer-temperature regulator which performs wafer-temperature regulation as a pretreatment of resist coating. CONSTITUTION:A brine-temperature regulator 11 heats or cools such that a brine temperature is made equal to a resist temperature in accor...

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Bibliographische Detailangaben
Hauptverfasser:	TAKAISHI YUTAKA, HIRANO HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPARATUS SPECIALLY ADAPTED THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TRANSPORTING
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Beschreibung
Zusammenfassung:	PURPOSE:To form an uniform resist film, by installing wafer-temperature regulator which performs wafer-temperature regulation as a pretreatment of resist coating. CONSTITUTION:A brine-temperature regulator 11 heats or cools such that a brine temperature is made equal to a resist temperature in accordance with the difference between the resist temperature on a resist-temperature detecting terminal 10 and the brine temperature on a brine-temperature detecting terminal 9. The temperature-regulated brine is sent into a heat exchanger 7 from a tank 15 of the brine-temperature detecting terminal by a circulation pump 12 via the inner part of a rotary shaft 14. A wafer heated by a pre-heater is fixed on the adhering surface of a heat exchanger 7 in a spin-chuck 4A, and heat exchange is performed via the adhering surface. After the surface temperature of the wafer is stabilized, resist is spouted from a nozzle 6 and the spin-chuck 4A is rotated at a high speed. A thin resist film is formed on the wafer, thereby.