LEAD FRAME FOR SEMICONDUCTOR DEVICE

PURPOSE:To omit a conventional coated film for a lead frame, by making the wire bonding part of the lead frame to be amorphous. CONSTITUTION:The main body of a lead frame 3 is made of Fe-Ni alloy, Cu alloy, Cu and Fe alloy. In order to form an amorphous body at a part for bonding pieces of wire 5, the lead frame is cooled very quickly and the amorphous part is implemented. Or only the part to be bonded is formed by very quick cooling and bonded to another part. Thus the amorphous body is completed. Or it can be formed by utilizing the impact of ions or an electron beam and the irradiation of a laser beam. It is advantageous in productivity and costs to make only the surface layer to be the amorphous body. In this constitution, the lead frame, which is advantageous for wire bonding especially using ultrasonic waves, is obtained. Sufficient strength can be secured even if the wire is directly bonded to the lead frame. A problem such as exfoliation of a conventional conductive coated layer and the like is excluded, and the yield rate is also improved remarkably.