MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent crystal defects from generating in the surface of a semiconductor substrate by a method wherein a resin film and metal film are subjected to etch-back by plasma until the resist pattern is exposed equipped with a flattened surface before it is removed for the formation of a wiring. CONSTITUTION:After the formation of an insulating film 2 of SiO2 or the like on the surface of a semiconductor substrate 1, a resist pattern 3 of a 1.5mu-thick PMIPK provided with an opening 3a is formed on the insulating film 2. Next, a 1mum-thick wiring Al alloy film 4 is deposited on the resist pattern 3 and in the opening 3a. Further, a resin film 5 (polyimide) is laid by application by using a spinner or the like, with the surface virtually flattened. The resin film 5 and metal film 4 are subjected to plasma etching by using a chlorine- based gas. The etching continues until the surface of the resist pattern is exposed flat. Finally, the resist pattern 3 is immersed in a resist-swelling liquid for removal from the insulating film 2, whereafter only the metal film filling the opening 3a is retained to serve as a wiring 4a.