III - V GROUP COMPOUND SEMICONDUCTOR DEVICE

III - V GROUP COMPOUND SEMICONDUCTOR DEVICE

In a semiconductor device, a contact with low resistance to a III-V compound semiconductor substrate was fabricated using refractory materials (26, 28) and small amounts of indium (30) as the contact material. The contact material was formed by depositing Mo, Ge and W with small amounts of In onto d...

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Bibliographische Detailangaben
Hauptverfasser: SUCHIIBUN RORENTSU RAITO, SANDEITSUPU TEIWARI, TOOMASU NERUSON JIYAKUSON, UIRIAMU HENRII PURAISU, JIERII MATSUKUFUAASON UTSUDOORU, MASANORI MURAKAMI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:In a semiconductor device, a contact with low resistance to a III-V compound semiconductor substrate was fabricated using refractory materials (26, 28) and small amounts of indium (30) as the contact material. The contact material was formed by depositing Mo, Ge and W with small amounts of In onto doped GaAs wafers (24). The contact resistance less than 1.0 ohm millimeter was obtained after annealing at 800 DEG C and the resistance did not increase after subsequent prolonged annealing at 400 DEG C.