PRODUCTION OF INDIUM PHOSPHIDE

PURPOSE:To obtain InP of uniform composition without containing the unreacted In and softening a quartz ampul, by constituting a high-temperature zone of a temperature gradient zone and an equalizing zone on the high-temperature side and transferring the temperature gradient zone parallel from the s...

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Bibliographische Detailangaben
Hauptverfasser:	NISHIBE NATAMI, YOSHIDA KIYOTERU, AZUMA KATSUMI, SHIROKAWA JUNJIRO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain InP of uniform composition without containing the unreacted In and softening a quartz ampul, by constituting a high-temperature zone of a temperature gradient zone and an equalizing zone on the high-temperature side and transferring the temperature gradient zone parallel from the side of a crystal growth starting and end of a boat to the side of ending. CONSTITUTION:High-purity phosphorus 3 is contained in one end of a quartz ampul 2 and a boat 4 containing high-purity In is housed in the other end. A heat barrier 6 is placed between them and the quartz ampul 2 is inserted into a heating furnace to keep the temperature gradient of the temperature gradient zone (R) at 4 deg.C/cm and the temperature of the equalizing zone (S) at 1,070 deg.C. The temperature gradient zone (R) is transferred parallel from a crystal growth starting end to the side of ending at 4-6mm/hr speed to grow an InP crystal, which is then cooled at 50 deg.C/hr rate. According to this method, the aimed InP crystal of uniform composition without containing the unreacted In can be produced by a temperature gradient solidification method without softening the quartz ampul 2.