JPS6216022B

PURPOSE:To prevent the erroneous operation of an integrated circuit due to alpha-ray by forming a coating film having a thickness thicker than 10mum made of polyimide resin or polyimide isoindole quinazolinedion (PII) on the region of an element. CONSTITUTION:An insulating film 21' is formed on...

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Bibliographische Detailangaben
Hauptverfasser:	HARADA YUKYOSHI, SAIKI ATSUSHI, MUKAI KIICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To prevent the erroneous operation of an integrated circuit due to alpha-ray by forming a coating film having a thickness thicker than 10mum made of polyimide resin or polyimide isoindole quinazolinedion (PII) on the region of an element. CONSTITUTION:An insulating film 21' is formed on the part of a man surface of a semiconductor substrate having a memory cell 21, and a bonding pad is formed on an insulating film 21'. Then, a coating film 23 which has a thickness thicker than 10mum made of polyimide resin or PII of less than several ppb of impurity content to become a source of generating alpha-ray is formed on the region of the memory cell 21 of an insulating substrate. Then, the semiconductor substrate is sealed with ceramic.