PHOTOSENSOR

PURPOSE:To improve the reliability of a photosensor remarkably by coating a photoconductive layer with an amorphous silicon oxide film containing no hydrogen. CONSTITUTION:ITO is deposited on a substrate 1 through a vacuum deposition method,and a lower electrode 2 consisting of a plurality of discrete electrodes is formed by using a photoetching technique. The whole is set to a deposition chamber for a plasma CVD device, H2 diluted 10% SiH4 and CO2 gas are introduced into the deposition chamber at the rate of CO2/SiH4=5/1, and an introducing gas is decomposed by glow discharge, thus depositing an amorphous silicon layer 3 on the substrate. Only H2 diluted 10% SiH4 gas is introduced, and a nondoped amorphous silicon layer 4 is deposited by glow discharge decomposition. Al is deposited through a vacuum deposition method, an upper electrode 5 is shaped, the whole is set into the deposition chamber for the plasma CVD device, SiH4, CO2 and N2 gas are introduced at the flow ratios of SiH4/ CO2=1/50 and N2/CO2=1/1 into the deposition chamber, and an introducing gas is glow-discharged and decomposed, thus depositing an a-SiO film 6 containing no hydrogen.