CRYSTAL GROWTH DEVICE

PURPOSE:To perform temperature-difference liquid-phase epitaxy, by making a jig of carbon for liquid-phase epitaxy and heating the jig itself by application of high frequency electric power in combination with a proper partial cooling method. CONSTITUTION:A substrate-installed part 2 and a metallic solution reservoir 3 are made of carbon. A supporting board 7, which supports the part 2 and serves as a heat sink, is formed hollowly, and a pipe 8, made of quartz, and containing a thermocouple, is located at its central part. The pipe 8 is provided with coupled holes 8a so that air or nitrogen for cooling is made to flow to cool the installed part 2. The part 2 and the solution reservoir 3 absorb high frequency electrode power to generate heat, being composed to enable temperature of metallic solution 5 and substrate crystal 1 to be controlled by the supplied power. Hence, temperature-difference liquid-phase epitaxy it performed.