LIQUID PHASE EPITAXY

PURPOSE:To grow a good-quality crystal layer with less surface fault by bringing a circular substrate into contact with a soln. for growth while pressing one end of the circular substrate on the side wall of a recess for holding the substrate on the surface of a substrate holder when a crystal is ep...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WAJIMA MINESAKI, OOKAWA YOSHINORI, UNNO TSUNEHIRO, TATE HISAFUMI, SUGIMOTO HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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