LIQUID PHASE EPITAXY

PURPOSE:To grow a good-quality crystal layer with less surface fault by bringing a circular substrate into contact with a soln. for growth while pressing one end of the circular substrate on the side wall of a recess for holding the substrate on the surface of a substrate holder when a crystal is epitaxially grown on the circular substrate by the slide boat method. CONSTITUTION:The soln. for growth is brought into contact with the circular substrate 2 fitted in the substrate holding recess 1a on the surface of the substrate holder 1 to epitaxially grow a crystal on the circular substrate 2. In this case, the circular substrate 2 is brought into contact with the soln. for growth while pressing one end of the circular substrate 2 fitted in the recess 1a on the opposite side of an orifla part 2a on the side wall of the recess 1a. The difference in the diameter between the circular substrate 2 and the recess 1a is preferably controlled to