MANUFACTURE OF SINGLE CRYSTAL THIN FILM

PURPOSE:To facilitate stable lifting-up of a single crystal by a mehtod wherein the size of an aperture for laser beam application is reduced and the difference between the temperature of a non-single crystal silicon thin film on the aperture and the temperature of a non-single crystal silicon thin film on an insulating film is reduced. CONSTITUTION:The size of the exposed region 1a of a single crystal silicon substrate 1 is limited to less than 4mum square each to reduce heat discharge into the substrate 1 and, on that region 1a only, a non-single crystal silicon thin film 3 with the thickness approximately equal to the thickness of an insulating film 2 is formed beforehand. Then, after a stripe-shape non-single crystal silicon thin film 6 is formed on a non- single crystal silicon thin film 4 which is to be an active layer with a reflection preventing film 5 between, if a light beam 7 is applied, the non-single crystal silicon thin film 3 is single-crystallized with the exposed part 1a of the substrate 1 as a seed and, with this single crystal silicon thin film as a seed, the non-single crystal silicon thin film 4 is single-crystallized to form a single crystal silicon thin film 9. With this constitution, the single crystal silicon thin film 9 whose crystal orientation is identical with the crystal orientation of the single crystal silicon substrate 1 can be obtained.