SEMICONDUCTOR P-N JUNCTION MANUFACTURING APPARATUS

PURPOSE:To obtain a 1- several molecule thick semiconductor p-n junction multilayer with a good conductive efficiency by putting p-type semiconductor, n-type semiconductor and other raw material in a silica tube with one or a plurality of branches and heating those in individual electric furnaces. CONSTITUTION:A silica tube 3' is evacuated by a vacuum pump 4 to a ultrahigh vacuum and the inside portions of the silica tube 3' are heated by electric furnaces 1 and 2 to suitable temperatures. After the suitable temperatures are reaches, a p-type semiconductor raw material 5, an n-type semiconductor raw material 5 or other raw materials are sequentially irradiated by laser beams 8 for a short time from laser beam emitters 7 at suitable time intervals to be evaporated by traces. The p-type, n-type semiconductors and other materials are sequentially precipitated on a conductive plate 6, various semiconductor crystals 6 or other materials in 1- several molecule thick layers. The semiconductors or other materials can be precipitated in any layers if necessary and such a multilayer as a p-n junction or the like can be manufactured.