FORMATION OF PATTERN

PURPOSE:To obtain the sectional shape of a resist pattern having high contrast by making double exposure at the adequate irradiation quantity consisting of the exposure by the prescribed irradiation quantity corresponding to the prescribed pattern shape and the exposure by the prescribed irradiation quantity to the central part of the pattern shape. CONSTITUTION:The irradiation quantity to the prescribed pattern forming region is set at n-times the quantity required for the pattern formation on the upper and lower layer resists to be applied and the irradiation quantity to the region which includes said region and has the width of 2-3 times the size of the prescribed pattern is set at k-times the quantity necessary for the pattern formation. The values n and k are so determined that the irradiation quantity to the prescribed pattern part attains the necessary for the pattern formation. The adequate irradiation quantity as a whole is eventually applied to each of the two layers of the upper and lower layers when the most adequate irradiation quantity to take the sensitivity of the upper and lower two layers into consideration is applied to the pattern having the line width of 2-3 times the pattern width of the actually designed pattern and when the pattern of the line width corresponding to the actually designed pattern is irradiated and exposed double at the adequate irradiation quantity. As a result, the resist pattern having a T-shaped section is obtd.