METHOD FOR CRYSTAL GROWTH

PURPOSE:To carry out the growth of a single crystal having uniform composition and impurity concentration, by dividing the molten liquid in a growth chamber with a number of partition walls to suppress the convection flow of the molten liquid and removing the partition walls successively according t...

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1. Verfasser:	UMEO ITSUO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To carry out the growth of a single crystal having uniform composition and impurity concentration, by dividing the molten liquid in a growth chamber with a number of partition walls to suppress the convection flow of the molten liquid and removing the partition walls successively according to the growth of the single crystal. CONSTITUTION:A growth chamber 1 containing molten liquid 3 is transferred horizontally along the direction of the arrow in a furnace having a proper temperature distribution to obtain a single crystal 5. In the above process, a number of partition walls 2 are arranged in the growth chamber 1 with regular intervals to suppress the convection flow of the molten liquid, and the walls 2 are removed successively according to the movement of the growth chamber 1 and the growth of the single crystal 5. The compositional change of the molten liquid can be prevented, the temperature fluctuation can be suppressed, and the composition and the impurity concentration of the grown single crystal 5 can be uniformized by this process.