PRODUCTION OF COMPOUND SEMICONDUCTOR

PURPOSE:To accurately estimate the pressure in a quartz ampul and to prevent the breakage of the quartz ampul by providing a recess on the low-temp. side of the quartz ampul, inserting a temp. sensor into the recess, and measuring the temp. of the recess when a compd. semiconductor single crystal is...

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Bibliographische Detailangaben
Hauptverfasser:	TAKEUCHI KIYOSHI, MASUKATA YOSHIMASA, SHIROKAWA JUNJIRO, KURIHARA KAZUO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To accurately estimate the pressure in a quartz ampul and to prevent the breakage of the quartz ampul by providing a recess on the low-temp. side of the quartz ampul, inserting a temp. sensor into the recess, and measuring the temp. of the recess when a compd. semiconductor single crystal is produced by a boat growth method. CONSTITUTION:The quartz ampul 3 contg. one reaction material 5 and a quartz boat 4 provided with the other reaction material is placed in the tubular furnace 2 in a high-pressure vessel 1. The quartz ampul 3 is heated to allow the reaction material 5 to react and the crystal of the semiconductor is deposited and grown in the quartz boat 4. In this case, the recess 20 is provided on the low-temp. side of the quartz ampul 3, the temp. sensor 15 is inserted into the recess, and the temp. of the part is measured. The pressure in the quartz ampul 3 is estimated from the measured temp. value by a temp.-pressure transducer 17 and the pressure difference between the estimated pressure and the pressure in the high-pressure vessel 1 ( measured by a pressure sensor 16) is adjusted to a specified value.