CHEMICAL VAPOR PHASE FILM FORMING EQUIPMENT USING PLASMA

PURPOSE:To enable obtaining the uniform distribution of film thickness easily adjusting gas flow distribution in a simple construction by changing the position of a perforated plate for dispersing gas flow provided between a perforated plate type electrode surface and the aperture of a gas supply pipe connected to the back of the electrode. CONSTITUTION:An electrode 2 facing to wafer 10 to be treated is made in a box type, many air holes 16 are provided on the surface facing to the wafer 10, a gas supply pipe is connected on the back of the electrode 2 and a perforated plate 13 for dispersing gas flow is provided near the aperture of the gas supply pipe connected to the box type electrode 2. In such a chemical vapor phase film forming equipment, means which can freely adjust the position of the perforated plate 13 bringing near to or separating from the aperture of the gas supply pipe are provided. For example, the gas flow dispersion plate 13 is connected to a pipe 7 with a rod 14 and can be moved vertically by tightening or loosening a nut 15 at the top of the pipe 7.