ETCHING OF POLYIMIDE RESIN FILM

PURPOSE:To etch a polyimide resin film with a high accuracy and a desired taper angle, by forming weakly and strongly etchant-resistant resist films on the resin film, forming a pattern thereon and etching the resin film with a basic solvent. CONSTITUTION:A 0.3-3mum-thick first resist film 3 is form...

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Bibliographische Detailangaben
Hauptverfasser:	SHOJI FUSAJI, MATSUYAMA HARUHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP WORKING-UP
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Beschreibung
Zusammenfassung:	PURPOSE:To etch a polyimide resin film with a high accuracy and a desired taper angle, by forming weakly and strongly etchant-resistant resist films on the resin film, forming a pattern thereon and etching the resin film with a basic solvent. CONSTITUTION:A 0.3-3mum-thick first resist film 3 is formed on a polymide film 2 formed on a substrate 1 by coating it with a weakly etchant-resistant paste resin comprising 95-5wt% cyclized isoprene rubber and 5-95wt% cyclized butadiene rubber, and a 0.3-4mum-thick second resist film 4 is formed thereon by coating it with a strongly etchant-resistant paste of an unsaturated ketone (e.g., polymethyl isopropenyl ketone). UV rays are applied through a photomask to develop films 3 and 4 and obtain resist masks 5 and 6. The resin film 2 is etched with a basic solvent comprising 90-30 vol% hydrazine hydrate and ethylenediamine, and the masks 5 and 6 are peeled off.