FORMATION OF ALUMINUM OXIDE FILM BY ACTIVATED REACTIVE ION PLATING

PURPOSE:To form a hard Al2O3 film on a substrate of a metal or the like by reacting Al vapor from an evaporating source with gaseous O2 as a reactive gas in an arc discharge type high vacuum ion plating apparatus. CONSTITUTION:A hard Al2O3 film having >=2000 micro-Knoop hardness is formed on the...

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Hauptverfasser:	SHIBUYA YOSHIO, OOTAKE TERUNORI, KUWANO SABURO, SUGIYAMA MASAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To form a hard Al2O3 film on a substrate of a metal or the like by reacting Al vapor from an evaporating source with gaseous O2 as a reactive gas in an arc discharge type high vacuum ion plating apparatus. CONSTITUTION:A hard Al2O3 film having >=2000 micro-Knoop hardness is formed on the surface of a substrate such as a steel plate preheated to 500 deg.C by an activated reactive ion plating method using high purity Al as an evaporating source and gaseous O2 as a reactive gas in an arc discharge type high vacuum ion plating apparatus. Conditions during the ion plating include 10kV-500-550mA output of an electron gun, 7-10X10Torr pressure of gaseous O2, 0.3-0.5kV voltage of the substrate, 40A thermoelectron current and 15-20A ionization current.