SEMICONDUCTOR ANALYZER

PURPOSE:To realize effectively analysis of a high densified and high integrated LSI by making it possible to perform impressing a signal to an optional place without contact and additionally detecting an electric potential section without contact. CONSTITUTION:An electron-beam in vacuum atmosphere p...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SHIRAGASAWA TSUYOSHI, NOYORI MASAHARU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	SHIRAGASAWA TSUYOSHI NOYORI MASAHARU
description	PURPOSE:To realize effectively analysis of a high densified and high integrated LSI by making it possible to perform impressing a signal to an optional place without contact and additionally detecting an electric potential section without contact. CONSTITUTION:An electron-beam in vacuum atmosphere projects to an output terminal C at an inverter circuit B and the secondary electron signal detector detects an electric potential status of the output terminal at the inverter B. When laser-beam projects to an acceptance element 21, the acceptance elements at OFF is changed to ON, then an input level of an inverter circuit A is changed from '1' to '0'. If the circuit between the inverter circuit A-B is normal, the change of the secondary electron signal can be detected according to the change of electric potential at point C, however, if the ciscuit is not novmal due to e.g. bad stack between circuit A-B, the secondary electron signal can not be detected.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS6164135A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS6164135A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS6164135A3</originalsourceid><addsrcrecordid>eNrjZBALdvX1dPb3cwl1DvEPUnD0c_SJjHIN4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BwWaGZiaGxqaOxkQoAQCaeh9M</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR ANALYZER</title><source>esp@cenet</source><creator>SHIRAGASAWA TSUYOSHI ; NOYORI MASAHARU</creator><creatorcontrib>SHIRAGASAWA TSUYOSHI ; NOYORI MASAHARU</creatorcontrib><description>PURPOSE:To realize effectively analysis of a high densified and high integrated LSI by making it possible to perform impressing a signal to an optional place without contact and additionally detecting an electric potential section without contact. CONSTITUTION:An electron-beam in vacuum atmosphere projects to an output terminal C at an inverter circuit B and the secondary electron signal detector detects an electric potential status of the output terminal at the inverter B. When laser-beam projects to an acceptance element 21, the acceptance elements at OFF is changed to ON, then an input level of an inverter circuit A is changed from '1' to '0'. If the circuit between the inverter circuit A-B is normal, the change of the secondary electron signal can be detected according to the change of electric potential at point C, however, if the ciscuit is not novmal due to e.g. bad stack between circuit A-B, the secondary electron signal can not be detected.</description><edition>4</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>1986</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19860402&DB=EPODOC&CC=JP&NR=S6164135A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19860402&DB=EPODOC&CC=JP&NR=S6164135A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIRAGASAWA TSUYOSHI</creatorcontrib><creatorcontrib>NOYORI MASAHARU</creatorcontrib><title>SEMICONDUCTOR ANALYZER</title><description>PURPOSE:To realize effectively analysis of a high densified and high integrated LSI by making it possible to perform impressing a signal to an optional place without contact and additionally detecting an electric potential section without contact. CONSTITUTION:An electron-beam in vacuum atmosphere projects to an output terminal C at an inverter circuit B and the secondary electron signal detector detects an electric potential status of the output terminal at the inverter B. When laser-beam projects to an acceptance element 21, the acceptance elements at OFF is changed to ON, then an input level of an inverter circuit A is changed from '1' to '0'. If the circuit between the inverter circuit A-B is normal, the change of the secondary electron signal can be detected according to the change of electric potential at point C, however, if the ciscuit is not novmal due to e.g. bad stack between circuit A-B, the secondary electron signal can not be detected.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1986</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBALdvX1dPb3cwl1DvEPUnD0c_SJjHIN4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BwWaGZiaGxqaOxkQoAQCaeh9M</recordid><startdate>19860402</startdate><enddate>19860402</enddate><creator>SHIRAGASAWA TSUYOSHI</creator><creator>NOYORI MASAHARU</creator><scope>EVB</scope></search><sort><creationdate>19860402</creationdate><title>SEMICONDUCTOR ANALYZER</title><author>SHIRAGASAWA TSUYOSHI ; NOYORI MASAHARU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS6164135A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1986</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIRAGASAWA TSUYOSHI</creatorcontrib><creatorcontrib>NOYORI MASAHARU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIRAGASAWA TSUYOSHI</au><au>NOYORI MASAHARU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR ANALYZER</title><date>1986-04-02</date><risdate>1986</risdate><abstract>PURPOSE:To realize effectively analysis of a high densified and high integrated LSI by making it possible to perform impressing a signal to an optional place without contact and additionally detecting an electric potential section without contact. CONSTITUTION:An electron-beam in vacuum atmosphere projects to an output terminal C at an inverter circuit B and the secondary electron signal detector detects an electric potential status of the output terminal at the inverter B. When laser-beam projects to an acceptance element 21, the acceptance elements at OFF is changed to ON, then an input level of an inverter circuit A is changed from '1' to '0'. If the circuit between the inverter circuit A-B is normal, the change of the secondary electron signal can be detected according to the change of electric potential at point C, however, if the ciscuit is not novmal due to e.g. bad stack between circuit A-B, the secondary electron signal can not be detected.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_JPS6164135A
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
title	SEMICONDUCTOR ANALYZER
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T19%3A45%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHIRAGASAWA%20TSUYOSHI&rft.date=1986-04-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPS6164135A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true