SEMICONDUCTOR ANALYZER

PURPOSE:To realize effectively analysis of a high densified and high integrated LSI by making it possible to perform impressing a signal to an optional place without contact and additionally detecting an electric potential section without contact. CONSTITUTION:An electron-beam in vacuum atmosphere p...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHIRAGASAWA TSUYOSHI, NOYORI MASAHARU
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To realize effectively analysis of a high densified and high integrated LSI by making it possible to perform impressing a signal to an optional place without contact and additionally detecting an electric potential section without contact. CONSTITUTION:An electron-beam in vacuum atmosphere projects to an output terminal C at an inverter circuit B and the secondary electron signal detector detects an electric potential status of the output terminal at the inverter B. When laser-beam projects to an acceptance element 21, the acceptance elements at OFF is changed to ON, then an input level of an inverter circuit A is changed from '1' to '0'. If the circuit between the inverter circuit A-B is normal, the change of the secondary electron signal can be detected according to the change of electric potential at point C, however, if the ciscuit is not novmal due to e.g. bad stack between circuit A-B, the secondary electron signal can not be detected.