INSTALLATION FOR PRODUCTION OF SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR

PURPOSE:The part for controlling the shape of a single crystal is made of sintered aluminum nitride to prevent the part from being corroded with the starting materials for the crystal and the melt sealant whereby dimensional stability and the quality of the crystals are improved. CONSTITUTION:The un...

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Bibliographische Detailangaben
1. Verfasser:	YONEYA KATSUTOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:The part for controlling the shape of a single crystal is made of sintered aluminum nitride to prevent the part from being corroded with the starting materials for the crystal and the melt sealant whereby dimensional stability and the quality of the crystals are improved. CONSTITUTION:The unit for production of single crystals of compound semiconductors is composed of a high-pressure vessel 1, a crucible 2 containing melted starting materials 7 and liquid sealant, a part for controlling the shape of the crystal which is set on the interface between both melts 7 and 8 and has an opening 13 and a pulling-up unit 9 for the crystal. The part 12 is constituted of sintered aluminum nitride.