JPS6161384B

JPS6161384B

PURPOSE:To obtain high dark specific resistance and high photoconductivity by using an amorphous material based on carbon and silicon. CONSTITUTION:Predetermined gases are introduced into a vacuum chamber system to generate discharge phenomenon, and the introduced gases are decomposed with the disch...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KAWAJIRI KAZUHIRO, MIZOBUCHI JUZO, AZUMA AKIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
CINEMATOGRAPHY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
COMPOUNDS THEREOF
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
ELECTROPHOTOGRAPHY
HOLOGRAPHY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
INORGANIC CHEMISTRY
MAGNETOGRAPHY
METALLURGY
NON-METALLIC ELEMENTS
PHOTOGRAPHY
PHYSICS
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:PURPOSE:To obtain high dark specific resistance and high photoconductivity by using an amorphous material based on carbon and silicon. CONSTITUTION:Predetermined gases are introduced into a vacuum chamber system to generate discharge phenomenon, and the introduced gases are decomposed with the discharge energy. By this glow discharge decomposition silane or a silane deriv. is reacted with a gas contg. carbon and fluorine such as CF4 gas to form photoconductive layer 204 made of amorphous material based on carbon and silicon. Electrically conductive support 201 is composed of support 202 and electrically conductive layer 203.