JPS6159526B

PURPOSE:To obtain a photoconductive target of IIb-VIb compound having an extremely large carrier mobility, by introducing at least one element to compose a vapor deposition layer into the vacuum airthiht vessel for vapor deposition before initiating the vapor deposition, when forming heterogeneous v...

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1. Verfasser:	TAKETOSHI KAZUHISA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	TAKETOSHI KAZUHISA
description	PURPOSE:To obtain a photoconductive target of IIb-VIb compound having an extremely large carrier mobility, by introducing at least one element to compose a vapor deposition layer into the vacuum airthiht vessel for vapor deposition before initiating the vapor deposition, when forming heterogeneous vapor deposition layer on a substrate by lamination. CONSTITUTION:When forming a vapor deposition layer consisting heterogenous element compound having the composition of CdxZn1-xSeyTe1-y (0
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CONSTITUTION:When forming a vapor deposition layer consisting heterogenous element compound having the composition of CdxZn1-xSeyTe1-y (0<x<1, 0<y<1) prior to initiating the vapor deposition, the airtight vessel is evacuated into a high vacuum of less than 1X10- to 1X10- torr. A glass substrate for target having transparent conductive film to be used as a signal electrode is placed into this airtight vessel, of which temperature is kept within 100 to 600 deg.C. In this state, one of hydrogen compounds, such as H2S, H2Se, and H2Te, to form the vapor deposition layer is charged into this vessel at partial gas pressure of 1X10- to 1X10- torr. After holding 1 second to 30 minutes, the vapor deposition is initiated. Thus, the crystalline nucleus generation rate is extremely lowered.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1986</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19861217&DB=EPODOC&CC=JP&NR=S6159526B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19861217&DB=EPODOC&CC=JP&NR=S6159526B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKETOSHI KAZUHISA</creatorcontrib><title>JPS6159526B</title><description>PURPOSE:To obtain a photoconductive target of IIb-VIb compound having an extremely large carrier mobility, by introducing at least one element to compose a vapor deposition layer into the vacuum airthiht vessel for vapor deposition before initiating the vapor deposition, when forming heterogeneous vapor deposition layer on a substrate by lamination. CONSTITUTION:When forming a vapor deposition layer consisting heterogenous element compound having the composition of CdxZn1-xSeyTe1-y (0<x<1, 0<y<1) prior to initiating the vapor deposition, the airtight vessel is evacuated into a high vacuum of less than 1X10- to 1X10- torr. A glass substrate for target having transparent conductive film to be used as a signal electrode is placed into this airtight vessel, of which temperature is kept within 100 to 600 deg.C. In this state, one of hydrogen compounds, such as H2S, H2Se, and H2Te, to form the vapor deposition layer is charged into this vessel at partial gas pressure of 1X10- to 1X10- torr. After holding 1 second to 30 minutes, the vapor deposition is initiated. Thus, the crystalline nucleus generation rate is extremely lowered.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1986</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOD2Cgg2MzS1NDUyc-JhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFIOpyMjIlSBACGxhx7</recordid><startdate>19861217</startdate><enddate>19861217</enddate><creator>TAKETOSHI KAZUHISA</creator><scope>EVB</scope></search><sort><creationdate>19861217</creationdate><title>JPS6159526B</title><author>TAKETOSHI KAZUHISA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS6159526BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1986</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKETOSHI KAZUHISA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKETOSHI KAZUHISA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JPS6159526B</title><date>1986-12-17</date><risdate>1986</risdate><abstract>PURPOSE:To obtain a photoconductive target of IIb-VIb compound having an extremely large carrier mobility, by introducing at least one element to compose a vapor deposition layer into the vacuum airthiht vessel for vapor deposition before initiating the vapor deposition, when forming heterogeneous vapor deposition layer on a substrate by lamination. CONSTITUTION:When forming a vapor deposition layer consisting heterogenous element compound having the composition of CdxZn1-xSeyTe1-y (0<x<1, 0<y<1) prior to initiating the vapor deposition, the airtight vessel is evacuated into a high vacuum of less than 1X10- to 1X10- torr. A glass substrate for target having transparent conductive film to be used as a signal electrode is placed into this airtight vessel, of which temperature is kept within 100 to 600 deg.C. In this state, one of hydrogen compounds, such as H2S, H2Se, and H2Te, to form the vapor deposition layer is charged into this vessel at partial gas pressure of 1X10- to 1X10- torr. After holding 1 second to 30 minutes, the vapor deposition is initiated. Thus, the crystalline nucleus generation rate is extremely lowered.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	JPS6159526B
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