JPS6159526B
PURPOSE:To obtain a photoconductive target of IIb-VIb compound having an extremely large carrier mobility, by introducing at least one element to compose a vapor deposition layer into the vacuum airthiht vessel for vapor deposition before initiating the vapor deposition, when forming heterogeneous v...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PURPOSE:To obtain a photoconductive target of IIb-VIb compound having an extremely large carrier mobility, by introducing at least one element to compose a vapor deposition layer into the vacuum airthiht vessel for vapor deposition before initiating the vapor deposition, when forming heterogeneous vapor deposition layer on a substrate by lamination. CONSTITUTION:When forming a vapor deposition layer consisting heterogenous element compound having the composition of CdxZn1-xSeyTe1-y (0 |
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