FORMATION OF PATTERN

PURPOSE:To form a high accuracy pattern while minimizing pattern errors by subjecting a photoresist layer on a substrate to patternwise exposure with a monochromatic light source and uniform exposure with a mono- or polychromatic light source. CONSTITUTION:A positive type photoresist layer 2 formed...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KAWAI YOSHIO, DOKEN MASANOBU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To form a high accuracy pattern while minimizing pattern errors by subjecting a photoresist layer on a substrate to patternwise exposure with a monochromatic light source and uniform exposure with a mono- or polychromatic light source. CONSTITUTION:A positive type photoresist layer 2 formed on an uneven Si substrate 1 is uniformaly exposed by irradiating a proper quantity of light from a monochromatic light source emitting Hgi rays. The layer 2 is then exposed through an optical mask 4 by irradiating light from a monochromatic light source 5 emitting Hgg rays, and the layer 2 is developed to form a pattern. Deviation in the quantity of light irradiated on the photoresist is reduced by properly controlling the extent of exposure, so a high accuracy pattern is formed.