SEMICONDUCTOR DEVICE

PURPOSE:To improve the reliability of a semiconductor chip by a method wherein an electrode pad is formed into a multilayer structure for the electrode pad to be mechanically strong enough to withstand pressure imposed during a wire- bonding process so that such pressure may not cause deformation of the electrode pad or cracks in insulating films. CONSTITUTION:On a gate electrode 14 constituting a MOSFETQM in a semiconductor chip 1, an insulating film 15 is formed of SiO2, PSG, or the like. An electrode pad 10 is formed on the insulating film 15 in a region surrounding the semiconductor chip 1. The electrode pad 10 is formed simultaneously with an aluminum wiring 16 to be connected to a diffused layer 12 of the MOSFETQM. Between the insulating film 15 and the electrode pad 10, there is a metal film 17 made of tungsten, molybdenum, titanium, or the like, which is superior to aluminum in strength or hardness, with the film 15, pad 10, and film 17 combining into a single lamination. In a semiconductor device designed as such, the electrode pad 10 will not experience deformation even under the pressure imposed upon the electrode pad 10 during a process wherein a wire 6 is connected to the electrode pad 10.